面議(經常性薪資達4萬元或以上) 新北市新店區 5年工作經驗 1天前更新
Responsibilities:
Develop and execute comprehensive SiC MOSFET characterization plans from engineering samples through qualification and production release.
Perform DC, A.C and thermal characterization including ruggedness characterization UIS/avalanche, SOA, short-circuit capability, Qrr, trr, and peak reverse-recovery current and other applicable stress conditions
Perform dynamic switching characterization using double-pulse and application-relevant testing, including Eon/Eoff, switching times, dv/dt, di/dt, and ringing.
Evaluate performance versus temperature, bus voltage, drain current, gate-drive voltage, external gate resistance, and switching conditions.
Investigate abnormal electrical behavior and correlate results with device, wafer process, assembly/package, and test variables.
Develop good-versus-bad characterization methods and identify electrical signatures suitable for production screening where applicable.
Support bench-to-ATE correlation, datasheet limit development, product specifications, guard bands, and production test limits.
Prepare characterization reports and clearly communicate technical conclusions to cross-functional teams
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