面議(經常性薪資達4萬元或以上) 新竹縣竹東鎮 3年工作經驗 今天剛更新
【職務說明】
負責設計與開發高頻主動與被動元件,包括 PIN Diode、Varactor、MIM Capacitor、Inductor、Filter 等,用於 Ku/Ka-band 射頻模組。需具備元件物理模擬、射頻電路設計與電磁場分析能力,能整合製程、封裝與系統設計,推動 RF-on-Glass / Panel-level 元件之開發與驗證。
【Job Description】
Responsible for the design and development of high-frequency active and passive devices such as PIN diodes, varactors, MIM capacitors, inductors, and filters for Ku/Ka-band RF modules. The candidate should possess strong skills in device physics simulation, RF circuit design, and electromagnetic analysis, and be capable of integrating process, packaging, and system design to advance RF-on-Glass or panel-level device development and validation.
【工作內容】
1.設計與優化高頻二極體、可變電容、電感及濾波器等元件之結構與性能。
2.使用 TCAD(Silvaco、Sentaurus、COMSOL 等)進行元件電性、摻雜與場效應模擬。
3.使用 ADS / HFSS / Momentum / CST 進行射頻與電磁模擬,驗證 S 參數、插入損耗、隔離度與 Q 值。
4.參與 RF-on-Glass、SIOG、UTG 等異質整合平台之元件設計與測試驗證。
5.撰寫模擬與量測報告,並與製程及量測團隊合作完成 prototype 驗證。
【Key Responsibilities】
1. Design and optimize high-frequency diodes, varactors, inductors, and filters for RF applications.
2. Conduct TCAD simulations (Silvaco, Sentaurus, COMSOL) for device electrical and doping profile analysis.
3. Perform RF and EM simulations using ADS / HFSS / Momentum / CST to validate S-parameters, insertion loss, isolation, and Q-factor.
4. Participate in RF-on-Glass, SIOG, UTG platform design and testing for integrated RF device development.
5. Prepare simulation and measurement reports and collaborate with process and test teams for prototype validation.
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